58 vts process photodiodes vts process low capacitance, large area photodiode features ? visible to ir spectral range excellent qe - 400 to 1100 nm guaranteed 400 nm response response @ 940 nm, 0.60 a/w, typical useable with visible and ir leds better than 1% linearity over four decades of illumination moderate shunt resistance low capacitance fast response choice of three styles: bare chip 6" flying leads 1" anode buss wire large area cells solderable contacts product description this series of planar, p on n, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety of sources such as leds, ireds, flashtubes, incandescent lamps, lasers, etc. improved shunt resistance minimizes amplifier offset and drift in high gain systems. the solderable contact system on these photodiodes provides a cost effective design solution for many applications. part numbering system for vts process unmounted cells vts__xx last two digits identify chip size and process vts20 xx vts30 xx vts31 xx bare chip with no wires or coating. chip with red and black awg#30, insulated, flexible wires soldered to the contacts. chip with a buss wire soldered to the topside contact.
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